Masao Isomura

Title: The Innovative Contributions of Masao Isomura

Introduction

Masao Isomura is a prominent inventor based in Hiratsuka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on methods for forming zinc oxide (ZnO) films and semiconductor devices, which are crucial for advancements in electronic and photovoltaic applications.

Latest Patents

Isomura's latest patents include a method for forming a ZnO film, a method for forming a ZnO semiconductor layer, and a method for fabricating a semiconductor device. One of his notable inventions involves a ZnO buffer layer that has an electric conductivity of 1×10 S/cm or lower. This buffer layer is formed on a substrate through sputtering, followed by the creation of a ZnO semiconductor layer under specific conditions regarding the flow rate ratio of oxygen gas. Additionally, he has developed a photovoltaic device that incorporates an n-type microcrystalline silicon layer, an i-type microcrystalline silicon-germanium layer, and a p-type microcrystalline silicon layer, all laminated on a substrate.

Career Highlights

Masao Isomura is associated with Sanyo Electric Co., Ltd., where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced materials and devices.

Collaborations

Isomura has worked alongside notable colleagues, including Katsutoshi Takeda and Masaki Shima. Their collaborative efforts have further enhanced the research and development of semiconductor technologies.

Conclusion

Masao Isomura's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of innovative electronic and photovoltaic devices.