The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jul. 11, 2001
Masao Isomura, Kyoto-fu, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
This invention provides a photovoltaic device including an n-type microcrystalline Si layer, an i-type microcrystalline SiGe layer, and a p-type microcrystalline Si layer laminated on a substrate and using a thin microcrystalline silicon based semiconductor layer as a photoactive layer. The i-type microcrystalline SiGe layer is a microcrystalline SiGe layer which a Ge composition ratio is 20-40 at. %, a signal intensity of a Ge—Ge bond is 30-60% of a signal intensity of a Si—Si bond observed by the Raman spectroscopy, and a signal intensity of a Si—Ge bond is between those of the above two signal intensities.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile