Company Filing History:
Years Active: 1976
Title: The Innovations of Masao Iimura: Pioneering Semiconductor Technologies
Introduction: Masao Iimura, an esteemed inventor from Hitachi, Japan, has made significant strides in the field of semiconductor technology. With a focus on creating devices with low power loss, his contributions are both innovative and impactful.
Latest Patents: Iimura holds a patent for a method of manufacturing a low power loss semiconductor device. This innovative technique involves forming a metallic coating on a thoroughly cleaned semiconductor substrate through ion plating. As a result, the semiconductor device exhibits reduced power loss and high switching speeds, setting it apart from traditional semiconductor devices with diffused junctions. Additionally, a remarkably thin metal-injected layer is established at the interface between the metallic coating and the semiconductor substrate, allowing for the formation of Schottky barrier devices.
Career Highlights: Masao Iimura is currently associated with Hitachi, Ltd., a company recognized for its commitment to technological advancements. His work has contributed to the ongoing evolution within the semiconductor industry, underscoring the importance of efficient, high-performance devices.
Collaborations: Throughout his career, Iimura has collaborated with notable colleagues such as Masanobu Hanazono and Osamu Asai. Their combined expertise has fostered an environment conducive to creativity and innovation, ultimately benefiting the development of cutting-edge technologies.
Conclusion: Masao Iimura stands out as a significant figure in the semiconductor arena, with his patent reflecting a strong understanding of material science and engineering principles. As the industry continues to evolve, his contributions remain vital in shaping the future of electronics and semiconductor devices.