The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1976
Filed:
Mar. 21, 1975
Applicant:
Inventors:
Masanobu Hanazono, Hitachi, JA;
Osamu Asai, Hitachi, JA;
Moriaki Fuyama, Hitachi, JA;
Masao Iimura, Hitachi, JA;
Hideyuki Yagi, Hitachi, JA;
Masahiro Okamura, Hitachi, JA;
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
204192 ; 204298 ; 357 15 ; 427 38 ; 427 84 ; 118 491 ;
Abstract
By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.