This inventor holds 1 USPTO granted patent. Top assignee: Riken & Sii Nanotechnology Inc.. Active years: 2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2007
Title: Masao Abe: Focused Ion Beam Technology
Introduction
Masao Abe is an inventor associated with Chiba, Japan. His patent work concerns focused ion beam technology and the formation of narrow gaps between electrodes.
Latest Patents
Abe is credited with 1 patent: “Charged Particle Beam Apparatus and Method of Forming Electrodes Having Narrow Gap Therebetween by Using the Same.” The invention describes a focused ion beam apparatus that uses two probers contacting separate points on a sample, a voltage source, and an ammeter to monitor current between those points. A conductive film is formed across the gap using a deflection electrode and a gas gun. When the monitored current reaches a predetermined value, a blanking electrode turns off the focused charged particle beam.
Career Highlights
Abe’s listed company affiliation is Riken & SII Nanotechnology Inc. His patent highlights an approach to controlling conductive-film formation by monitoring current during focused-beam processing.
Collaborations
The provided information identifies Toshiaki Fujii and Kunji Shigeto as Abe’s coworkers.
Conclusion
Masao Abe’s recorded invention combines focused ion beam processing and current monitoring to form narrow electrode gaps with controlled beam exposure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile