Location History:
- Gunma, JP (1983)
- Ota, JP (1990)
Company Filing History:
Years Active: 1983-1990
Title: Masanori Nishida: Innovator in Semiconductor Technology
Introduction
Masanori Nishida is a prominent inventor based in Ota, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
Nishida's latest patents include an insulated gate field effect transistor with a buried layer. This invention involves a unique design that allows for improved channel region performance in semiconductor substrates. His second patent is for a corrosion-resistant structure for conductors and phosphosilicate glass layered devices. This innovation enhances the durability and functionality of semiconductor devices by incorporating advanced materials and structures.
Career Highlights
Masanori Nishida has had a successful career at Sanyo Electric Co., Ltd., where he has been instrumental in developing cutting-edge semiconductor technologies. His expertise and innovative approach have positioned him as a key figure in the industry.
Collaborations
Throughout his career, Nishida has collaborated with notable colleagues, including Masashige Aoyama and Hiroshi Onodera. These partnerships have fostered a creative environment that has led to significant advancements in semiconductor technology.
Conclusion
Masanori Nishida's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry positively.