The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1983
Filed:
Jan. 29, 1981
Applicant:
Inventors:
Masanori Nishida, Gunma, JP;
Shigeo Ootani, Oota, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 41 ; 357 49 ; 357 52 ; 357 68 ; 357 72 ;
Abstract
A semiconductor device comprises an oxide film and a polysilicon electrode formed in succession on a semiconductor substrate, and a phosphor silicate glass layer formed on the polysilicon electrode and the oxide film and having the smoothed surface. An aluminum electrode is formed on the phosphor silicate glass. A nitride film is formed on the aluminum electrode and the phosphor silicate glass layer, for example, by a chemical vapor deposition process, so as to completely cover the phosphor silicate glass layer.