Kanuma, Japan

Masamitsu Itagaki

This inventor holds 1 USPTO granted patent. Top assignee: Sony Chemicals Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masamitsu Itagaki. Retrieved from https://idiyas.com/inventor/masamitsu-itagaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Masamitsu Itagaki: Innovator in Semiconductor Technology

Introduction

Masamitsu Itagaki is a notable inventor based in Kanuma, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique connection structure for semiconductor electrode terminals.

Latest Patents

Masamitsu Itagaki holds a patent for a connection structure for semiconductor electrode terminals. This patent describes a connection structure configured such that electrodes formed on an overcoat layer on a substrate are connected to other electrode terminals. The connection utilizes an anisotropically electroconductive adhesive comprising electroconductive particles dispersed in an insulating adhesive. Notably, the angle of encroachment A of the electroconductive particles into the overcoat layer is made to be at least 135°.

Career Highlights

Itagaki is associated with Sony Chemicals Corporation, where he has been able to apply his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

One of his notable coworkers is Hiroyuki Fujihira, with whom he has likely collaborated on various projects within the company.

Conclusion

Masamitsu Itagaki's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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