Gunma, Japan

Masami Mitsuhashi

This inventor holds 3 USPTO granted patents. Top assignee: Mosaid Technologies Corporation. Active years: 1995-2008.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 53(Granted Patents)


Location History:

  • Gunma, JP (1995 - 1996)
  • Sapporo, JP (2008)

Company Filing History:


Years Active: 1995-2008

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3 patents (USPTO):Explore Patents

Title: Masami Mitsuhashi: Innovator in Dynamic Random Access Memory Technology

Introduction

Masami Mitsuhashi is a prominent inventor based in Gunma, Japan. She has made significant contributions to the field of dynamic random access memory (DRAM) technology. With a total of 3 patents to her name, Mitsuhashi has developed innovative solutions that enhance the performance and efficiency of memory systems.

Latest Patents

Mitsuhashi's latest patents include groundbreaking inventions such as a dynamic random access memory using imperfect isolating transistors. This invention features apparatus and methods for controlling the sensing of bit lines, which facilitates the distribution of bit line charging current at any time. It also enables the rapid raising of the sense modes to full logic levels. The embodiment consists of multiple bit storage capacitors and a folded bit line that receives charge stored on one of the capacitors. Additionally, it includes a sense amplifier with a pair of sense nodes for sensing voltage differentials across the nodes. The apparatus connected to the bit line and sense nodes imperfectly isolates the sense nodes from the bit line, allowing current to leak through. This innovation ultimately enhances the charging of the bit line capacitance to predetermined logic voltage levels.

Another notable patent is the method for DRAM sensing current control. This invention involves a DRAM with several bit lines and associated sense amplifiers, arranged across an integrated circuit chip. The sense amplifiers are disposed in a row, with low resistance power supply conductors extending parallel to the row. These conductors carry logic high and low level voltages. The apparatus couples sense inputs of the sense amplifiers to the power supply conductors, enabling the passage of current resulting from the logic levels to the sense amplifiers.

Career Highlights

Mitsuhashi is currently employed at Mosaid Technologies Corporation, where she continues to push the boundaries of memory technology. Her work has been instrumental in advancing the capabilities of DRAM systems, making them more efficient and reliable.

Collaborations

Throughout her career, Mitsuhashi has collaborated with notable colleagues, including Richard C Foss and Peter B Gillingham. These partnerships have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

Masami Mitsuhashi is a trailblazer in the field of dynamic random access memory technology. Her innovative patents

Profile summary based on public USPTO records.
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