Hachioji, Japan

Masami Kouketsu

This inventor holds 4 USPTO granted patents. Top assignees: Renesas Technology Corp., Other. Active years: 2004-2010.


% Patents Active = 75.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2004-2010

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4 patents (USPTO):Explore Patents

Title: Masami Kouketsu: Innovator in Semiconductor Technology

Introduction

Masami Kouketsu is a notable inventor based in Hachioji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on improving the manufacturing processes of semiconductor integrated circuit devices.

Latest Patents

Kouketsu's latest patents include a method of manufacturing semiconductor integrated circuit devices with high and low breakdown-voltage MISFETs. This innovative method involves several steps, such as forming insulating films and conductive films to enhance the performance of the devices. The invention aims to raise the threshold voltage of parasitic MOS and suppress the occurrence of the NBT phenomenon, showcasing Kouketsu's commitment to advancing semiconductor technology.

Career Highlights

Throughout his career, Masami Kouketsu has worked with prominent companies, including Renesas Technology Corporation. His experience in the industry has allowed him to develop and refine his innovative ideas, contributing to the advancement of semiconductor manufacturing techniques.

Collaborations

Kouketsu has collaborated with notable colleagues, including Hideki Yasuoka and Susumu Ishida. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Masami Kouketsu's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations.

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