Kawasaki, Japan

Masaki Yoshimura

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaki Yoshimura. Retrieved from https://idiyas.com/inventor/masaki-yoshimura-q072ry5v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Masaki Yoshimura and His Semiconductor Memory Device Patent.

Introduction

Masaki Yoshimura is an inventor associated with Kawasaki, Japan. His patent work includes a semiconductor memory device designed to improve memory-cell programming and reading operations.

Latest Patents

Yoshimura is associated with 1 patent, titled “Semiconductor Memory Device.” The invention describes a control circuit that performs data writing in three stages: erasing the memory cell, preliminarily programming it to a temporary threshold distribution corresponding to the write data, and then programming it to the final distribution. During reading, the circuit adjusts the read-pass voltage applied to a neighboring word line according to the neighboring memory cell’s threshold value, then determines whether the first memory cell is at the erase level.

Career Highlights

Yoshimura is associated with Kabushiki Kaisha Toshiba, a Japanese technology company. His patent reflects work on semiconductor memory operation, particularly the control of programming thresholds and read voltages.

Collaborations

The provided information lists Marie Takada and Kiichi Tachi as Yoshimura’s coworkers. It does not specify whether they collaborated with him on this patent.

Conclusion

Masaki Yoshimura’s semiconductor memory device patent addresses staged data programming and adaptive read-voltage control, highlighting his contribution to memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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