Tokyo, Japan

Masakazu Onishi


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Masakazu Onishi: Innovator in Crystal Growth Technology

Introduction

Masakazu Onishi is a prominent inventor based in Tokyo, Japan. He is known for his innovative contributions to the field of crystal growth technology. His work has significantly impacted the methods used in producing high-quality single crystals.

Latest Patents

Onishi holds a patent for an "Apparatus for supplying raw material." This invention addresses challenges in single crystal growth using the Czochralski (CZ) method. The apparatus allows for the additional supply of granular or lump polycrystalline raw material into a raw material melt within a crucible through a vertical charging tube. A unique feature of this invention is the raw material accumulating section, which ensures a predetermined amount of polycrystalline raw material is maintained, preventing issues such as melt splashing.

Career Highlights

Masakazu Onishi is currently employed at Sumitomo Mitsubishi Silicon Corporation. His role at the company has allowed him to develop and refine his innovative ideas in crystal growth technology. His patent reflects his commitment to improving manufacturing processes in the semiconductor industry.

Collaborations

Onishi has collaborated with notable colleagues, including Hideki Watanabe and Hiroshi Asano. Their combined expertise has contributed to advancements in the field and has fostered a collaborative environment for innovation.

Conclusion

Masakazu Onishi's contributions to crystal growth technology exemplify the importance of innovation in the semiconductor industry. His patent demonstrates a practical solution to common challenges faced in the field, showcasing his role as a leading inventor.

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