Sumitomo Mitsubishi Silicon Corporation

Masakazu Onishi

Hideki Watanabe

Hiroshi Asano

In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downward in the vertical charging tube working in such a way that a predetermined amount of the polycrystalline raw material is accumulated in the raw material accumulating section and the polycrystalline raw material in excess of the predetermined amount falls down. The polycrystalline raw material falling down in the vertical charging tube strikes against the accumulated raw material in the raw material accumulating section, thereby absorbing a shock of the falling raw material. The accumulated raw material works simultaneously as a protective member, thereby preventing breakage of the tube accompanying absorption of the shock from occurring. It is therefore possible to prevent melt splashing that is problematical when a lump raw material for recharge is charged using a vertical charging tube.

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Tokyo, Japan

Masakazu Onishi