Anan, Japan

Masahito Yamazoe

This inventor holds 1 USPTO granted patent. Top assignee: Nichia Corporation. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahito Yamazoe. Retrieved from https://idiyas.com/inventor/masahito-yamazoe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 52(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: The Innovations of Masahito Yamazoe

Introduction

Masahito Yamazoe is a prominent inventor based in Anan, Japan. He is known for his contributions to the field of semiconductor technology. His innovative work has led to the development of a significant patent that enhances the performance of semiconductor devices.

Latest Patents

Yamazoe holds a patent for a nitride semiconductor device. This device includes an active layer, an n-side contact layer, and a p-side contact layer. The design features multiple n-side layers, each containing varying concentrations of n-type impurities. This configuration improves the efficiency and functionality of the semiconductor device.

Career Highlights

Masahito Yamazoe is associated with Nichia Corporation, a leading company in the semiconductor industry. His work at Nichia has been instrumental in advancing semiconductor technologies. He has made significant contributions that have been recognized within the industry.

Collaborations

Yamazoe has collaborated with notable colleagues, including Yukio Narukawa and Hiroki Narimatsu. These collaborations have fostered innovation and have led to advancements in their respective fields.

Conclusion

Masahito Yamazoe's contributions to semiconductor technology exemplify the impact of innovative thinking in the industry. His patent for the nitride semiconductor device showcases his commitment to enhancing technology. His work continues to influence the future of semiconductor development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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