The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Feb. 08, 2005
Masahito Yamazoe, Anan, JP;
Masayuki Eguchi, Anan, JP;
Hiroki Narimatsu, Anan, JP;
Kazunori Sasakura, Anan, JP;
Yukio Narukawa, Anan, JP;
Masahito Yamazoe, Anan, JP;
Masayuki Eguchi, Anan, JP;
Hiroki Narimatsu, Anan, JP;
Kazunori Sasakura, Anan, JP;
Yukio Narukawa, Anan, JP;
Nichia Corporation, Tokushima, JP;
Abstract
A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order from the n-side contact layer between the n-side contact layer and the active layer, while at least the second n-side layer and the fourth n-side layer each contain an n-type impurity, and the concentration of the n-type impurity in at least the second n-side layer and the fourth n-side layer is higher than the concentration of the n-type impurity in the first n-side layer and the third n-side layer.