Yamaguchi, Japan

Masahiro Tanaka

This inventor holds 1 USPTO granted patent. Top assignee: Siltronic Ag. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiro Tanaka. Retrieved from https://idiyas.com/inventor/masahiro-tanaka-hkzonf6h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Masahiro Tanaka: Innovator in Silicon Single Crystal Production

Introduction

Masahiro Tanaka is a notable inventor from Yamaguchi, Japan, recognized for his contributions to the field of silicon single crystal production. His innovative work has led to advancements in manufacturing processes that are crucial for various technological applications.

Latest Patents

Tanaka holds a patent for a seed crystal used in the production of silicon single crystals, specifically designed for the Czochralski method. This seed crystal is engineered to prevent dislocations during immersion in molten silicon and can withstand the weight of large silicon single crystals. The patent also details methods for producing both the seed crystal and the silicon single crystal, enhancing the elimination ratio of dislocations.

Career Highlights

Masahiro Tanaka is currently associated with Siltronic AG, a leading company in the semiconductor industry. His work has significantly impacted the efficiency and quality of silicon single crystal production, making him a key figure in this technological domain.

Collaborations

Tanaka has collaborated with esteemed colleagues, including Yutaka Kishida and Teruyuki Tamaki, to further advance the field of silicon crystal technology.

Conclusion

Masahiro Tanaka's innovative contributions to silicon single crystal production exemplify the importance of research and development in the semiconductor industry. His work continues to influence advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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