Nagaokakyo, Japan

Masahiko Taguchi

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Technology Academic Research Center. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiko Taguchi. Retrieved from https://idiyas.com/inventor/masahiko-taguchi-hwiceega

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Masahiko Taguchi: Innovator in Semiconductor Technology

Introduction

Masahiko Taguchi is a prominent inventor based in Nagaokakyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of simulation methods for LDMOSFET devices. His innovative work has led to advancements that enhance the performance and reliability of these essential components in modern electronics.

Latest Patents

Masahiko Taguchi holds a patent for a "Simulation method and simulation apparatus for LDMOSFET." This invention focuses on increasing the breakdown voltage in an LDMOSFET by treating the drift region as a resistive element. The potential distribution of the overall device is calculated through iterative methods, considering the resistance. Additionally, the capacitance generated in the drift region is analytically calculated, assuming a linear potential distribution. The capacitance in the overlap region between the gate electrode and the drift region is also calculated by taking into account the potential from the depletion region to the accumulation region. This patent showcases Taguchi's expertise in semiconductor design and simulation.

Career Highlights

Masahiko Taguchi is affiliated with the Semiconductor Technology Academic Research Center, where he continues to push the boundaries of semiconductor research. His work has been instrumental in developing new methodologies that improve the efficiency and effectiveness of semiconductor devices. Taguchi's dedication to innovation has made him a respected figure in the field.

Collaborations

Throughout his career, Masahiko Taguchi has collaborated with notable colleagues, including Mitiko Miura and Masahiro Yokomichi. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor technology.

Conclusion

Masahiko Taguchi's contributions to semiconductor technology, particularly through his patented simulation methods for LDMOSFETs, highlight his role as an influential inventor. His work continues to impact the field, paving the way for future innovations in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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