The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
May. 30, 2008
Mitiko Miura, Higashihiroshima, JP;
Masahiro Yokomichi, Higashihiroshima, JP;
Takahiro Kajiwara, Higashihiroshima, JP;
Norio Sadachika, Higashihiroshima, JP;
Masataka Miyake, Higashihiroshima, JP;
Takahiro Iizuka, Machida, JP;
Masahiko Taguchi, Nagaokakyo, JP;
Tatsuya Ohguro, Yokohama, JP;
Mitiko Miura, Higashihiroshima, JP;
Masahiro Yokomichi, Higashihiroshima, JP;
Takahiro Kajiwara, Higashihiroshima, JP;
Norio Sadachika, Higashihiroshima, JP;
Masataka Miyake, Higashihiroshima, JP;
Takahiro Iizuka, Machida, JP;
Masahiko Taguchi, Nagaokakyo, JP;
Tatsuya Ohguro, Yokohama, JP;
Semiconductor Technology Academic Research Center, Yokohama-shi, JP;
Abstract
The drift region for increasing the breakdown voltage in an LDMOSFET is regarded as a resistive element. The potential distribution of the overall device is calculated by obtaining a potential distribution considering the resistance by iterative calculation. A capacitance generated in the drift region is analytically calculated assuming a linear potential distribution. A capacitance generated in the overlap region between the gate electrode and the drift region is calculated by considering the potential from the depletion region to the accumulation region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile