Company Filing History:
Years Active: 2012-2023
Title: Masahide Gotoh: Innovator in Silicon Carbide Semiconductor Technology
Introduction
Masahide Gotoh is a prominent inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology, particularly focusing on silicon carbide devices. With a total of 5 patents to his name, Gotoh's work has advanced the capabilities and efficiency of semiconductor devices.
Latest Patents
Gotoh's latest patents include innovative designs for silicon carbide semiconductor devices. One notable patent describes a contact to silicon carbide semiconductor device, where a barrier metal, specifically a titanium nitride layer, is utilized to enhance the performance of the contact electrode. This design ensures that the contact electrode is formed only in a designated area, preventing nickel metal aggregation between the barrier metal and the metal electrode. Another significant patent involves a silicon carbide semiconductor switching device, which features a planar metal oxide semiconductor insulated gate structure. This device includes a silicon carbide substrate with a wider bandgap than silicon, enhancing its operational efficiency.
Career Highlights
Masahide Gotoh is currently employed at Fuji Electric Co., Ltd., where he continues to innovate in the semiconductor field. His work has been instrumental in developing advanced semiconductor technologies that are crucial for various applications in electronics.
Collaborations
Throughout his career, Gotoh has collaborated with notable colleagues, including Shun-ichi Nakamura and Yasuyuki Kawada. These collaborations have fostered a productive environment for innovation and have contributed to the success of their projects.
Conclusion
Masahide Gotoh's contributions to silicon carbide semiconductor technology exemplify his dedication to innovation in the field. His patents reflect a commitment to enhancing the performance and reliability of semiconductor devices.