The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jan. 10, 2012
Yasuyuki Kawada, Matsumoto, JP;
Takeshi Tawara, Matsumoto, JP;
Shun-ichi Nakamura, Matsumoto, JP;
Masahide Gotoh, Matsumoto, JP;
Yasuyuki Kawada, Matsumoto, JP;
Takeshi Tawara, Matsumoto, JP;
Shun-ichi Nakamura, Matsumoto, JP;
Masahide Gotoh, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., , JP;
Abstract
A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.