Masahi Horiguchi

Title: The Innovations of Masahi Horiguchi

Introduction

Masahi Horiguchi is a notable inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology, particularly in memory systems. His work has led to advancements that enhance the efficiency and performance of semiconductor memory devices.

Latest Patents

Horiguchi holds a patent for a "Semiconductor memory having charge transfer device voltage amplifier." This invention addresses the challenges of high-sensitivity read-out in semiconductor memories, where numerous memory cells are arranged in a matrix format. The patent describes a writing circuit, a voltage amplifier, and a sense amplifier that are connected to a data line linking the input and output of memory cells in the same row. The voltage amplifier is designed as a CTD voltage amplifier, consisting of two charge transfer gates and a driving gate positioned between them. Additionally, the invention includes a charge supplying circuit and a charge transfer circuit that facilitate information transfer without significant loss.

Career Highlights

Masahi Horiguchi is associated with Hitachi, Ltd., a leading company in technology and electronics. His work at Hitachi has allowed him to focus on innovative solutions in semiconductor memory technology. Horiguchi's contributions have been instrumental in advancing the capabilities of memory devices used in various applications.

Collaborations

Throughout his career, Horiguchi has collaborated with esteemed colleagues such as Yoshinobu Nakagome and Masakazu Aoki. These collaborations have fostered a productive environment for innovation and have led to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Masahi Horiguchi's work in semiconductor memory technology exemplifies the impact of innovation in enhancing electronic devices. His patent and collaborations reflect a commitment to advancing technology for better performance and efficiency.