The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 1987

Filed:

Sep. 07, 1984
Applicant:
Inventors:

Masakazu Aoki, Tokorozawa, JP;

Yoshinobu Nakagome, Hachioji, JP;

Masahi Horiguchi, Kokubunji, JP;

Toshifumi Ozaki, Hachioji, JP;

Katsuhiro Shimohigashi, Ohminami-Musashimurayama, JP;

Shinichi Ikenaga, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365189 ; 365204 ; 365210 ;
Abstract

In a semiconductor memory in which a large number of memory cells are arrayed in the shape of a matrix, arrangements are provided for a high-sensitivity read-out. In one embodiment, a writing circuit, a voltage amplifier and a sense amplifier are successively connected to a data line that connects input and output ends of the memory cells in an identical row, with the voltage amplifier being formed as a CTD voltage amplifier that is composed of two charge transfer gates and a driving gate located between them. In accordance with another embodiment, a charge supplying circuit and a charge transfer circuit can be coupled between the memory cells and the sense amplifier to allow information transfer without any substantial loss.


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