Sendai, Japan

Masafumi Shirai


Average Co-Inventor Count = 5.4

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Toyonaka, JP (2003)
  • Miyagi-ken, JP (2014)
  • Sendai, JP (2021)

Company Filing History:


Years Active: 2003-2021

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3 patents (USPTO):

Title: Masafumi Shirai: Innovator in Magnetic Technologies

Introduction

Masafumi Shirai is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of magnetic technologies, holding three patents that showcase his innovative spirit and technical expertise.

Latest Patents

Shirai's latest patents include a magnetic element, a magnetic memory device, and a magnetic sensor. According to one embodiment, the magnetic element consists of a first layer and a second layer. The first layer includes a first element and a second element, where the first element is selected from the group consisting of Fe, Co, and Ni, while the second element includes Ir and Os. The second layer is nonmagnetic. Another notable patent involves a ferromagnetic tunnel junction structure and a magnetoresistive effect device, which utilizes a tunnel barrier layer made of a crystalline non-magnetic material. This material has constituent elements similar to those of a crystalline oxide with a spinel structure, providing a unique approach to spintronics devices.

Career Highlights

Shirai has worked at esteemed institutions such as the National Institute of Advanced Industrial Science and Technology and the National Institute for Materials Science. His work at these organizations has allowed him to explore and develop advanced magnetic technologies.

Collaborations

Some of his notable coworkers include Tadakatsu Ohkubo and Kazuhiro Hono, who have collaborated with him on various projects in the field of materials science and magnetics.

Conclusion

Masafumi Shirai's contributions to magnetic technologies through his patents and collaborations highlight his role as an influential inventor in the field. His innovative work continues to impact the development of advanced materials and devices.

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