National Institute of Advanced Industrial Science and Technology

National Institute for Materials Science

Tohoku University

Masafumi Shirai

Kazuhiro Hono

Tadakatsu Ohkubo

Shinji Yuasa

Hiroaki Sukegawa

Hiroyuki Akinaga

Seiji Mitani

Takayuki Nozaki

Xiandong Xu

Kouichiro Inomata

Yoshio Miura

Takashi Manago

Tomohiko Niizeki

Rachwal Anna Koziol

Kazutaka Abe

Masahito Tsujikawa

Shingo Muramoto

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Magnetic element, magnetic memory device, and magnetic sensor

A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same

A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

Spin electronic material and fabrication method thereof

Growing community of inventors

Sendai, Japan

Masafumi Shirai