Masae Sahara

Title: Masae Sahara and Nitride Semiconductor Technology.

Introduction

Masae Sahara is an inventor associated with Takahagi, Japan, and Hitachi Cable, Inc. Her patent work concerns nitride semiconductor epitaxial wafers and semiconductor devices.

Latest Patents

The provided information lists one patent for Sahara: “Nitride Semiconductor Epitaxial Wafer and Nitride Semiconductor Device.” The invention describes a wafer structure with a growth substrate, first and second structure layers, a dislocation propagation direction changing layer, and a buffer layer. These layers are designed to redirect dislocations laterally or alter their propagation direction, addressing defects within the semiconductor structure. Sahara is credited with 1 patent.

Career Highlights

Sahara’s listed patent reflects work on the layered design of nitride semiconductor materials and devices. The available information associates her with Hitachi Cable, Inc., but does not provide further details about her role or career history.

Collaborations

Yoshihiko Moriya and Takeshi Tanaka are identified as Sahara’s coworkers. The provided information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Masae Sahara’s recorded patent focuses on managing dislocations in nitride semiconductor epitaxial wafers, highlighting her contribution to semiconductor materials and device technology.