The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Mar. 17, 2009
Yoshihiko Moriya, Hitachi, JP;
Takeshi Tanaka, Tokai, JP;
Yohei Otoki, Hitachi, JP;
Masae Sahara, Takahagi, JP;
Yoshihiko Moriya, Hitachi, JP;
Takeshi Tanaka, Tokai, JP;
Yohei Otoki, Hitachi, JP;
Masae Sahara, Takahagi, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.