Nara, Japan

Masaaki Nakayama

This inventor holds 2 USPTO granted patents. Top assignee: Toyoda Gosei Co., Ltd.. Active years: 2006-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaaki Nakayama. Retrieved from https://idiyas.com/inventor/masaaki-nakayama-iped6to7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Nara, JP (2006)
  • Nara-ken, JP (2007)

Company Filing History:


Years Active: 2006-2007

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2 patents (USPTO):Explore Patents

Title: Masaaki Nakayama: Innovator in Semiconductor Technology

Introduction

Masaaki Nakayama is a prominent inventor based in Nara-ken, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. With a total of 2 patents, Nakayama's work has advanced the capabilities of semiconductor lasers and scintillators.

Latest Patents

One of Nakayama's latest patents is for a light-emitting semiconductor device and a method of manufacturing it. This invention focuses on a layer structure of a semiconductor laser of a surface emitting type. It features an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN. The design includes an n-type DBR layer made of n-type InGaN and a dielectric DBR layer formed on and below an InGaN active layer. This configuration creates a resonator by forming reflection surfaces vertical to the z-axis, allowing for easier production of surface-emitting semiconductor lasers compared to conventional methods.

Another notable patent involves a scintillator that includes a Group III nitride compound semiconductor. This scintillator emits fluorescent light when exposed to various radiation sources, such as CU-Kα-ray, X-ray, or γ-ray sources. The invention also encompasses a scintillation counter that utilizes this Group III nitride compound semiconductor scintillator.

Career Highlights

Masaaki Nakayama is currently employed at Toyoda Gosei Co., Ltd., where he continues to innovate in the semiconductor field. His work has been instrumental in enhancing the performance and efficiency of light-emitting devices.

Collaborations

Throughout his career, Nakayama has collaborated with notable colleagues, including Masanobu Ando and Katsuhisa Sawazaki. These partnerships have contributed to the advancement of semiconductor technologies and the successful development of his patents.

Conclusion

Masaaki Nakayama's contributions to semiconductor technology, particularly in light-emitting devices and scintillators, have made a significant impact in the field. His innovative patents reflect his dedication to advancing technology and improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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