The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Aug. 20, 2004
Masanobu Ando, Aichi-ken, JP;
Masahito Nakai, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Masaaki Nakayama, Nara-ken, JP;
Masanobu Ando, Aichi-ken, JP;
Masahito Nakai, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Masaaki Nakayama, Nara-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;
Abstract
In layer structureof a semiconductor laser of a surface emitting type,andrepresent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layermade of n-type InGaN and a DBR layermade of dielectric are formed on and below a InGaN active layer, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile