Himeji, Japan

Masaaki Iwanishi


Average Co-Inventor Count = 1.7

ph-index = 2

Forward Citations = 59(Granted Patents)


Company Filing History:


Years Active: 1989-2001

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2 patents (USPTO):Explore Patents

Title: Masaaki Iwanishi: Innovator in Semiconductor Technology

Introduction

Masaaki Iwanishi is a prominent inventor based in Himeji, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device design.

Latest Patents

One of Masaaki Iwanishi's latest patents involves a semiconductor device that includes a metal film, which is not in ohmic contact with a guard ring region. This design features a metal film formed on the surface portion of an insulating film, under which the guard ring region surrounds a base region of a planar transistor. The arrangement allows for a planar semiconductor device with a high withstand voltage, free of short-circuiting between electrodes during withstand voltage measurement. Additionally, it prevents degeneration of the withstand voltage due to atmospheric humidity. The metal film is electrically floated, ensuring it does not contact any area, including the guard ring region.

Career Highlights

Masaaki Iwanishi is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on advancing semiconductor technologies, contributing to the company's reputation for innovation.

Collaborations

Masaaki has collaborated with notable colleagues, including Toshihisa Inoue and Kazuhiko Kurahashi. Their teamwork has fostered an environment of creativity and innovation within the company.

Conclusion

Masaaki Iwanishi's contributions to semiconductor technology reflect his dedication to innovation and excellence. His patents demonstrate a commitment to developing advanced solutions that enhance device performance and reliability.

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