The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1989
Filed:
Dec. 20, 1985
Masaaki Iwanishi, Himeji, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device includes a metal film, not in ohmic contact with a guard ring region (a second region). The metal film is formed on that surface portion of an insulating film under which the guard ring region is formed to surround a base region (a first region) of a planar transistor. In this arrangement, a planar semiconductor device with a high withstand voltage, which is free of short-circuiting between electrodes upon the measurement of the withstand voltage and involves no degeneration of the withstand voltage resulting from an atmospheric humidity, can be obtained. The metal film, which is not in contact with the guard ring region, is 'electrically floated', i.e., is not in contact with any area inclusive of the guard ring region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile