Mary Lundgren Long

Title: Mary Lundgren Long: Innovator in Microelectronic Components

Introduction

Mary Lundgren Long is a prominent inventor based in Phoenix, AZ (US). She has made significant contributions to the field of microelectronics, particularly in the development of advanced static random access memory (SRAM) cell structures. With a total of 2 patents, her work showcases innovative methods of fabrication that enhance the performance and efficiency of electronic components.

Latest Patents

Mary Lundgren Long's latest patents include the "Lamellar-derived microelectronic component array and method of fabrication" and the "Vertically wired integrated circuit and method of fabrication." The first patent describes sub-lithographic lamella and pillar structures defined by larger lines or lamellae. It details the creation of a three-dimensional SRAM cell structure as a vertical stack of wired transistors fabricated from crystalline silicon. This innovative design allows for the creation of a three-dimensional cell integrated circuit using a single mask step. Various structural features and methods of fabrication are elaborated upon, including peripheral interfaces and supplemental techniques.

The second patent also focuses on a three-dimensional SRAM cell structure, emphasizing the vertical stack of wired transistors. Similar to her first patent, it highlights the use of crystalline silicon and the ability to create integrated circuits efficiently. The detailed description of structural features and fabrication methods further underscores her expertise in this area.

Career Highlights

Throughout her career, Mary Lundgren Long has demonstrated a commitment to advancing microelectronic technology. Her innovative approaches have positioned her as a key figure in the development of next-generation electronic components. Her patents reflect her dedication to improving the efficiency and functionality of SRAM cell structures.

Collaborations

Mary has collaborated with notable professionals in her field, including Walter Richard Buerger, Jr. and Jakob Hans Hohl. These collaborations have contributed to the depth and breadth of her work, allowing for the exchange of ideas and expertise that enhance her innovative projects.

Conclusion

Mary Lundgren Long is a trailblazer in the field of microelectronics, with a focus on innovative SRAM cell structures. Her patents reflect her significant contributions to technology and her commitment to advancing the industry. Her work continues to inspire future innovations in microelectronic components.