This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Mary C Adams: Innovator in Semiconductor Technology
Introduction
Mary C Adams is a prominent inventor based in DeSoto, TX (US), known for her contributions to semiconductor technology. With a total of 2 patents, she has made significant advancements in methods that enhance the production of semiconductor devices.
Latest Patents
One of her latest patents is a method for reducing gate oxide damage caused by charging. This innovative process involves creating an oxide gate assembly on a silicon layer within a production line chamber. Following this, a polysilicon layer is deposited. The method maintains a pressure of at least 1.2 Torr while lowering the power in the chamber, effectively reducing gate oxide damage during wafer production. This invention is particularly useful for gate oxide layers of less than 1000 angstroms.
Career Highlights
Mary C Adams is currently employed at Texas Instruments Corporation, where she continues to develop cutting-edge technologies in the semiconductor field. Her work has been instrumental in improving the reliability and efficiency of semiconductor manufacturing processes.
Collaborations
Mary has collaborated with notable coworkers, including Farris D Malone and Sima Salamati-Saradh, contributing to a dynamic and innovative work environment.
Conclusion
Mary C Adams stands out as a key figure in the field of semiconductor technology, with her patents reflecting her commitment to innovation and excellence. Her work at Texas Instruments Corporation continues to influence the industry positively.