The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Feb. 16, 1999
Farris D. Malone, Richardson, TX (US);
Sima Salamati-Saradh, Plano, TX (US);
Ingrid G. Jenkins, Silver Spring, MD (US);
David R. Wyke, Carrollton, TX (US);
Mary C. Adams, DeSoto, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of processing wafers containing a gate oxide assembly (,) is disclosed that reduces gate oxide damage during wafer production due to damage caused by charging. The method comprises creating an oxide gate assembly (,) on a silicon layer (,) in a production line chamber followed by the deposition of a polysilicon layer (,). Following the creation of the gate oxide assembly (,) a pressure of at least 1.2 Torr is maintained while lowering the power within the production line chamber. The invention can be used with a gate oxide layer (,) of less than 1000 angstroms.