Espoo, Finland

Martti Harmoinen

This inventor holds 2 USPTO granted patents. Top assignees: Abb Industry Oy, Asea Brown Boveri Ag. Active years: 1998-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martti Harmoinen. Retrieved from https://idiyas.com/inventor/martti-harmoinen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1998-1999

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2 patents (USPTO):Explore Patents

Title: Martti Harmoinen: Innovator in Power Semiconductor Technology

Introduction

Martti Harmoinen is a notable inventor based in Espoo, Finland. He has made significant contributions to the field of power semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and reliability of power transfer systems.

Latest Patents

Harmoinen's latest patents include a "Method for controlling the power to be transferred via a mains inverter" and a "High-power semiconductor module." The high-power semiconductor module features multiple first submodules arranged in an electrically insulated manner within a common housing. These submodules are interconnected and designed to allow for short-circuit-proof operation at relatively high switching frequencies. This innovation enables a low current-carrying capacity while increasing the withstand voltage by connecting the submodules in series.

Career Highlights

Throughout his career, Martti Harmoinen has worked with prominent companies such as Asea Brown Boveri AG and ABB Industry Oy. His experience in these organizations has contributed to his expertise in power semiconductor technologies.

Collaborations

Harmoinen has collaborated with notable professionals in his field, including Thomas Stockmeier and Vesa Manninen. These partnerships have further enriched his work and innovations.

Conclusion

Martti Harmoinen's contributions to power semiconductor technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of the complexities involved in power transfer systems, making him a significant figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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