Asea Brown Boveri Ag

Abb Industry Oy

Martti Harmoinen

Thomas Stockmeier

Pasi Pohjalainen

Pekka Tiitinen

Vesa Manninen

Method for controlling the power to be transferred via a mains inverter

In a high-power semiconductor module (10), in which a plurality of first submodules (13, 14, 16, 17) are arranged in an electrically insulated manner in a common housing (12) and on a common cold plate (11) and are interconnected with one another, the first submodules (13, 14, 16, 17) each �lacuna! individual controllable power semiconductor switches (13a), short-circuit-proof operation in conjunction with relatively high switching frequencies is made possible, with a relatively low current-carrying capacity and an increased withstand voltage, by virtue of the fact that the first submodules (13, 14, 16, 17) are connected in series within the module for the purpose of increasing the withstand voltage.

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Espoo, Finland

Martti Harmoinen