Cambridge, United Kingdom

Martin R Sparkes

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Martin R Sparkes: Innovator in Laser Surface Melting Technology

Introduction

Martin R Sparkes is a notable inventor based in Cambridge, GB. He has made significant contributions to the field of materials science, particularly in the area of reducing outgassing from metal surfaces. His innovative approach utilizes laser technology to enhance the properties of metal surfaces, making them more efficient for high-power applications.

Latest Patents

Martin R Sparkes holds a patent for a method titled "Laser surface melting for outgassing reduction." This patent describes a process that involves applying energy from a laser to a metal surface, sufficient to melt it and allow it to re-solidify. The result is a metal surface with larger grains and fewer grain boundaries, which effectively reduces outgassing sites for trapped gases, particularly atomic hydrogen. The method is particularly applicable to metals such as steel, stainless steel, nickel, and copper, and is designed for use in high-vacuum environments and vacuum electronic devices.

Career Highlights

Martin R Sparkes is currently associated with the United States of America as represented by the Secretary of the Air Force. His work focuses on advancing technologies that improve the performance and reliability of high-power systems. With a single patent to his name, he has already made a significant impact in his field.

Collaborations

Throughout his career, Martin has collaborated with esteemed colleagues such as Steven B Fairchild and Daniel P Gortat. These partnerships have contributed to the development and refinement of his innovative technologies.

Conclusion

Martin R Sparkes exemplifies the spirit of innovation in the field of materials science. His work on laser surface melting technology not only addresses critical challenges in outgassing reduction but also paves the way for advancements in high-power system devices.

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