This inventor holds 2 USPTO granted patents and 2 EPO patents. Top assignee: Technische Unversität Berlin. Active years: 2011-2012.
Location History:
- Berlin, DE (2011)
- Essen, DE (2012)
Company Filing History:
Years Active: 2011-2012
Title: Martin Geller: Innovator in Memory Technology
Introduction
Martin Geller is a notable inventor based in Essen, Germany. He has made significant contributions to the field of memory technology, holding two patents that showcase his innovative approach to semiconductor structures.
Latest Patents
Geller's latest patents include a memory device that features a strained double-heterostructure. This invention involves an inner semiconductor layer sandwiched between two outer layers, with differing lattice constants. The resulting lattice strain induces the formation of quantum dots capable of storing charge carriers. These quantum dots have an emission barrier of 1.15 eV or higher and provide a density of at least three energy states per 1000 nm, all within a narrow energy band of 50 meV or less. Another patent focuses on a memory cell designed for storing bit data. This memory cell comprises at least two electrical terminals and a semiconductor structure with a potential well. The charged state of this potential well can be manipulated through various applied voltages, allowing for efficient data storage.
Career Highlights
Throughout his career, Martin Geller has worked at prestigious institutions, including Technische Universität Berlin. His work has significantly advanced the understanding and development of memory technologies.
Collaborations
Geller has collaborated with esteemed colleagues such as Dieter Bimberg and Andreas Marent, contributing to the advancement of semiconductor research.
Conclusion
Martin Geller's innovative work in memory technology and semiconductor structures has positioned him as a key figure in the field. His patents reflect a deep understanding of the complexities involved in data storage solutions.