The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Dec. 16, 2010
Dieter Bimberg, Berlin, DE;
Martin Geller, Essen, DE;
Andreas Marent, Berlin, DE;
Tobias Nowozin, Berlin, DE;
Dieter Bimberg, Berlin, DE;
Martin Geller, Essen, DE;
Andreas Marent, Berlin, DE;
Tobias Nowozin, Berlin, DE;
Technische Universitat Berlin, Berlin, DE;
Abstract
An embodiment of the invention relates to a memory comprising a strained double-heterostructure having an inner semiconductor layer which is sandwiched between two outer semiconductor layers, wherein the lattice constant of the inner semiconductor layer differs from the lattice constants of the outer semiconductor layers, the resulting lattice strain in the double-heterostructure inducing the formation of at least one quantum dot inside the inner semiconductor layer, said at least one quantum dot being capable of storing charge carriers therein, and wherein, due to the lattice strain, the at least one quantum dot has an emission barrier of 1.15 eV or higher, and provides an energy state density of at least three energy states per 1000 nm, all said at least three energy states being located in an energy band of 50 meV or less.