San Ramon, CA, United States of America

Martin F Yeoman

This inventor holds 1 USPTO granted patent. Top assignee: Lam Research Corporation. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martin F Yeoman. Retrieved from https://idiyas.com/inventor/martin-f-yeoman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Martin F. Yeoman: Inventor of a Vacuum Chamber Gate Valve

Introduction

Martin F. Yeoman is an inventor based in San Ramon, California. His patent work includes a vacuum chamber gate valve design intended to isolate interfacing chambers.

Latest Patents

Yeoman is associated with 1 patent: “Vacuum Chamber Gate Valve and Method for Making Same.” The patent describes a method for assembling a gate drive valve used to isolate interfacing chambers. A drive assembly is mounted to a chamber so that its shaft translates through a surface of the assembly and along a bore in the chamber. A gate plate is then attached to the shaft’s end while the shaft is at least partly inside the chamber.

Career Highlights

Yeoman is associated with Lam Research Corporation, a company that develops equipment and services for semiconductor manufacturing. His patented valve assembly addresses chamber isolation through the placement of a translating shaft and gate plate.

Collaborations

Yeoman’s listed coworker is Trace L. Boyd. Their shared association with Lam Research Corporation connects their professional profiles to the semiconductor equipment industry.

Conclusion

Martin F. Yeoman’s patent describes a practical gate valve assembly for isolating vacuum chambers, reflecting his contribution to semiconductor manufacturing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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