Martin David Birch

Title: Martin David Birch: Innovator in High Voltage Power Semiconductors

Introduction

Martin David Birch is a notable inventor based in Louisville, Colorado. He has made significant contributions to the field of power semiconductor devices, particularly in high voltage applications. His innovative work has led to the development of a unique patent that enhances the reliability and efficiency of semiconductor technology.

Latest Patents

Birch holds a patent for a "High reliability-high voltage junction termination with charge dissipation layer." This invention describes a high voltage power semiconductor device that includes a junction termination structure designed to improve reliability. The device features an active area surrounded by a termination structure with regions of opposite polarity to the substrate. A tunneling oxide layer is integrated to facilitate the dissipation of hot carriers, thereby enhancing the device's performance while mitigating stacking faults at the silicon surface. This patent exemplifies Birch's commitment to advancing semiconductor technology.

Career Highlights

Martin David Birch is currently employed at Microsemi Corporation, where he continues to innovate in the semiconductor industry. His work at Microsemi has positioned him as a key player in the development of high voltage power devices. Birch's expertise and dedication to his field have earned him recognition among his peers.

Collaborations

Throughout his career, Birch has collaborated with talented individuals such as Dumitru Sdrulla and Duane Edward Levine. These collaborations have contributed to the advancement of technology in the semiconductor sector.

Conclusion

Martin David Birch is a distinguished inventor whose work in high voltage power semiconductors has made a lasting impact on the industry. His innovative patent and contributions to Microsemi Corporation highlight his role as a leader in semiconductor technology.