Stewartsville, NJ, United States of America

Marlin W Focht

This inventor holds 3 USPTO granted patents. Top assignee: At&t Bell Laboratories. Active years: 1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Marlin W Focht. Retrieved from https://idiyas.com/inventor/marlin-w-focht

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1986

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3 patents (USPTO):Explore Patents

Title: Marlin W. Focht: Innovator in Semiconductor Technology

Introduction

Marlin W. Focht is a notable inventor based in Stewartsville, NJ (US), recognized for his contributions to semiconductor technology. He holds a total of 3 patents, showcasing his innovative work in the field.

Latest Patents

One of his latest patents is titled "High resistivity group III-V compounds by helium bombardment." This invention involves the bombardment of InP with helium-3 and helium-4 over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2, which reproducibly forms highly resistive regions in both p-type and n-type single crystal material. The average peak resistivities achieved are about 10.sup.9 ohm-cm for p-type InP and about 10.sup.3 ohm-cm for n-type InP. Additionally, high resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs through helium bombardment. The patent also describes stripe geometry lasers and planar photodiodes that incorporate helium-bombarded zones.

Another significant patent is the "Method of making integrated circuits employing proton-bombarded AlGaAs." This invention utilizes the property of materials in the GaAs/AlGaAs system, where proton-bombarded n-type material becomes highly resistive while p-type material remains highly conductive. This property is leveraged for the fabrication of integrated circuits that include buried semiconductor interconnections or bus bars between devices.

Career Highlights

Marlin W. Focht has made substantial contributions to the field of semiconductor technology during his career. He has worked at AT&T Bell Laboratories, a leading research institution known for its advancements in telecommunications and technology.

Collaborations

Throughout his career, Marlin has collaborated with notable colleagues, including Bertram Schwartz and Albert T. Macrander. These collaborations have likely contributed to the innovative advancements in semiconductor technology.

Conclusion

Marlin W. Focht's work in semiconductor technology, particularly in the development of high resistivity materials and integrated circuits, has made a significant impact in the field. His patents reflect a deep understanding of material properties and their applications in modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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