The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1986
Filed:
May. 30, 1983
Applicant:
Inventors:
Leonard C Feldman, Berkeley Heights, NJ (US);
Marlin W Focht, Stewartsville, NJ (US);
Albert T Macrander, Summit, NJ (US);
Bertram Schwartz, Westfield, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 47 ; 357 91 ; 357 17 ; 372 46 ; 2957 / ;
Abstract
Helium-3 and helium-4 bombardment of InP over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2 reproducibly forms highly resistive regions in both p-type and n-type single crystal material. Average peak resistivities are about 10.sup.9 ohm-cm for p-type InP and are about 10.sup.3 ohm-cm for n-type InP. High resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs by helium bombardment. Stripe geometry lasers and planar photodiodes which incorporate helium-bombarded zones are described.