Summit, NJ, United States of America

Albert T Macrander


Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1986-1988

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3 patents (USPTO):Explore Patents

Title: Albert T. Macrander: Innovator in Semiconductor Technology

Introduction

Albert T. Macrander is a notable inventor based in Summit, NJ (US), recognized for his contributions to semiconductor technology. He holds a total of 3 patents, showcasing his innovative spirit and technical expertise in the field.

Latest Patents

One of his latest patents is a method of making indium phosphide devices. This invention involves epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers, which serve as excellent substrates for III-V semiconductor devices. The low defect density achieved due to the conducting InP wafers, along with the insulating characteristics of the semi-insulating InP layer, makes this method particularly appealing. The procedure for doping the insulating layer by ion implantation is advantageous for fabricating various devices, including MISFETs, MESFETs, and JFETs.

Another significant patent involves high resistivity group III-V compounds produced by helium bombardment. This process utilizes helium-3 and helium-4 bombardment of InP over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2, which reproducibly forms highly resistive regions in both p-type and n-type single crystal material. The average peak resistivities achieved are about 10.sup.9 ohm-cm for p-type InP and about 10.sup.3 ohm-cm for n-type InP. Additionally, high resistivity has been produced in GaP, GaSb, GaAs, and InGaAs through helium bombardment, leading to the development of stripe geometry lasers and planar photodiodes that incorporate helium-bombarded zones.

Career Highlights

Throughout his career, Albert T. Macrander has worked with prestigious organizations such as AT&T Bell Laboratories and American Telephone & Telegraph Company. His work at these institutions has significantly contributed to advancements in semiconductor technology.

Collaborations

He has collaborated with notable individuals in the field, including Bertram Schwartz and Marlin W. Focht. Their collective efforts have furthered the understanding and development of semiconductor devices.

Conclusion

Albert T. Macrander's innovative contributions to semiconductor technology and his successful career in research and development highlight his importance in the field. His patents continue to influence the design and fabrication

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