Radebeul, Germany

Markus Rochel

USPTO Granted Patents = 5 

 

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Dresden, DE (2009)
  • Radebeul, DE (2013 - 2024)

Company Filing History:


Years Active: 2009-2024

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5 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Markus Rochel

Introduction

Markus Rochel is a notable inventor based in Radebeul, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on methods for forming insulation layers in semiconductor bodies, which are crucial for the development of advanced electronic devices.

Latest Patents

Among his latest patents, Rochel has developed a method for forming an insulation layer in a semiconductor body and transistor device. This method involves creating a trench in the edge region of a semiconductor body and forming a plurality of superjunction transistor cells in the inner region. The insulation layer is formed on the first surface of the semiconductor body using a thermal oxidation process. Another patent details a similar method, emphasizing the importance of planarizing the insulation layer to ensure effective performance in semiconductor applications.

Career Highlights

Throughout his career, Markus Rochel has worked with prominent companies in the semiconductor industry, including Infineon Technologies AG and Infineon Technologies Austria AG. His experience in these organizations has allowed him to refine his expertise and contribute to innovative solutions in semiconductor technology.

Collaborations

Rochel has collaborated with esteemed colleagues such as Franz Hirler and Hans Weber. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the field.

Conclusion

Markus Rochel's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative methods continue to shape the future of electronic devices.

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