Helsinki, Finland

Marko Vehkamäki

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 50(Granted Patents)


Company Filing History:


Years Active: 2006-2009

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2 patents (USPTO):Explore Patents

Title: Marko Vehkamäki: Innovator in Oxide Thin Film Technology

Introduction

Marko Vehkamäki is a prominent inventor based in Helsinki, Finland. He has made significant contributions to the field of materials science, particularly in the development of oxide thin films. With a total of 2 patents, his work has implications for various advanced technologies.

Latest Patents

Marko's latest patents include a process for producing bismuth-containing oxide films and a method for growing oxide thin films containing barium and strontium. The first patent describes a process utilizing Atomic Layer Deposition to create bismuth-containing oxide thin films. These films can serve as ferroelectric or dielectric materials in integrated circuits and as superconducting materials. The second patent outlines a method for growing oxide thin films using cyclopentadienyl compounds as precursors for barium and strontium. This method results in thin films with high permittivity and excellent conformality.

Career Highlights

Marko Vehkamäki is currently associated with ASM International N.V., a company known for its innovative solutions in the semiconductor industry. His work at ASM has allowed him to push the boundaries of thin film technology, contributing to advancements in electronic materials.

Collaborations

Throughout his career, Marko has collaborated with notable colleagues such as Markku Leskelä and Mikko Ritala. These partnerships have fostered a collaborative environment that enhances innovation and research in their field.

Conclusion

Marko Vehkamäki's contributions to oxide thin film technology highlight his role as a key innovator in materials science. His patents and collaborations continue to influence advancements in the semiconductor industry.

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