This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries Inc.. Active years: 2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2018
Title: Mark S Lawliss: Innovator in Lithographic Mask Technology
Introduction
Mark S Lawliss is a notable inventor based in Essex Junction, Vermont. He has made significant contributions to the field of lithography, particularly in the development of mask substrate structures. His innovative work has led to the creation of a patent that enhances the manufacturing processes in semiconductor technology.
Latest Patents
Mark S Lawliss holds a patent for a mask substrate structure. This patent focuses on lithographic masks and details a substrate structure that includes a sub-resolution assist feature (SRAF) formed on a quartz substrate. The SRAF is composed of a patterned transition film and an absorber layer, which improves the precision and efficiency of lithographic processes.
Career Highlights
Throughout his career, Mark has been associated with GlobalFoundries Inc., a leading semiconductor manufacturer. His work at the company has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in the industry.
Collaborations
Mark has collaborated with several professionals in his field, including A Gary Reid and Richard E Wistrom. These collaborations have fostered a creative environment that encourages the exchange of ideas and technological advancements.
Conclusion
Mark S Lawliss is a prominent figure in the field of lithography, with a patent that showcases his innovative approach to mask substrate structures. His contributions to GlobalFoundries Inc. and collaborations with other professionals highlight his commitment to advancing semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile