Mark Francis Arendt

Title: Mark Francis Arendt: Innovator in Semiconductor Technology

Introduction

Mark Francis Arendt is a notable inventor based in Richardson, Texas. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advancements in dielectric materials and processing methods that enhance the performance of semiconductor devices.

Latest Patents

Arendt's latest patents include innovative methods for creating gate and LOCOS dielectrics. One patent describes a method that involves forming an isolation pad oxide layer on a substrate, followed by the formation and patterning of a silicon nitride layer. This method also includes steps for oxidizing portions of the substrate not covered by the silicon nitride layer to create a LOCOS layer. Additionally, he has developed a dual gate dielectric layer method that incorporates an inhibitor layer. This process results in a semiconductor device with a first and second dielectric layer, where the second layer is thicker than the first, both primarily composed of silicon dioxide.

Career Highlights

Mark Arendt is currently employed at Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His work at Texas Instruments has allowed him to push the boundaries of semiconductor technology and contribute to the development of advanced electronic devices.

Collaborations

Arendt collaborates with Damien Thomas Gilmore, working together to innovate and enhance semiconductor technologies. Their partnership exemplifies the collaborative spirit often found in research and development within the tech industry.

Conclusion

Mark Francis Arendt's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of electronic devices.