The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jan. 28, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Mark Francis Arendt, Richardson, TX (US);
Damien Thomas Gilmore, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76221 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/28211 (2013.01);
Abstract
Described examples include a method having steps of forming an isolation pad oxide layer on a substrate and forming and patterning a silicon nitride layer on the isolation pad oxide layer. The method also has steps of oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer and oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer.