Troy, NY, United States of America

Mark Durniak

USPTO Granted Patents = 5 

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2018-2024

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5 patents (USPTO):Explore Patents

Title: Mark Durniak: Innovator in Semiconductor Technology

Introduction

Mark Durniak is a notable inventor based in Troy, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on the growth of cubic crystalline phase structures on silicon substrates, which has implications for various electronic devices.

Latest Patents

One of Mark Durniak's latest patents is titled "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure." This patent describes a method of forming a semiconductor structure that includes providing a substrate with a first material portion and a single crystal silicon layer. The substrate features a major front surface, a major backside surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in these grooves, and a semiconductor material is epitaxially grown over the buffer layer, resulting in a hexagonal crystalline phase layer and a cubic crystalline phase structure.

Career Highlights

Throughout his career, Mark Durniak has worked with several organizations, including Stc.unm and UNM Rainforest Innovations. His experience in these companies has allowed him to develop and refine his innovative approaches to semiconductor technology.

Collaborations

Mark has collaborated with esteemed colleagues such as Steven Roy Julien Brueck and Seung-Chang Lee. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Mark Durniak is a prominent figure in the semiconductor industry, with a strong portfolio of patents that reflect his innovative spirit and technical expertise. His contributions continue to influence the development of advanced semiconductor structures and devices.

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