Williston, VT, United States of America

Mark David Levy


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Mark David Levy: Innovator in Semiconductor Technology

Introduction

Mark David Levy is a notable inventor based in Williston, Vermont, specializing in semiconductor technology. He has made significant contributions to the field, particularly through his innovative patent related to high electron mobility transistors.

Latest Patents

Levy holds a patent for "High electron mobility transistor devices having a silicided polysilicon layer." This patent focuses on structures in semiconductor devices and methods of forming them. The invention provides an active region above a substrate, with source and drain electrodes in contact with this active region. It features a gate positioned laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps, and the polysilicon layer can be configured as an electronic fuse, a resistor, or a diode. He has 1 patent to his name.

Career Highlights

Levy is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to advance his work in semiconductor technology. His expertise and innovative approach have made him a valuable asset in the industry.

Collaborations

Throughout his career, Levy has collaborated with talented individuals such as Vibhor Jain and Johnatan A Kantarovsky. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Mark David Levy's contributions to semiconductor technology, particularly through his patent on high electron mobility transistors, highlight his innovative spirit and dedication to advancing the field. His work continues to influence the industry and inspire future innovations.

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